- 您现在的位置：买卖IC网 > Sheet目录483 > NDF08N50ZG (ON Semiconductor)MOSFET N-CH 500V 8.5A TO-220FP
NDF08N50Z
THERMAL RESISTANCE
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State (Note 3)
Symbol
R q JC
R q JA
NDF08N50Z
3.6
50
Unit
° C/W
3. Insertion mounted
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
BV DSS
D BV DSS /
D T J
500
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
V DS = 500 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
I DSS
I GSS
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 4)
Static Drain ? to ? Source
On ? Resistance
V GS = 10 V, I D = 3.6 A
R DS(on)
0.69
0.85
W
Gate Threshold Voltage
Forward Transconductance
V DS = V GS , I D = 100 m A
V DS = 15 V, I D = 3.75 A
V GS(th)
g FS
3.0
3.9
6.0
4.5
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
C iss
730
912
1095
pF
Output Capacitance (Note 5)
Reverse Transfer Capacitance
(Note 5)
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
C oss
C rss
95
15
120
27
140
35
Total Gate Charge (Note 5)
Q g
16
31
46
nC
Gate ? to ? Source Charge (Note 5)
Gate ? to ? Drain (“Miller”) Charge
(Note 5)
Plateau Voltage
Gate Resistance
V DD = 250 V, I D = 7.5 A,
V GS = 10 V
Q gs
Q gd
V GP
R g
3
8
6.2
17
6.3
3.0
9
25
V
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
13
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = 250 V, I D = 7.5 A,
V GS = 10 V, R G = 5 W
t r
t d(off)
t f
23
31
29
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S = 7.5 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 7.5 A, di/dt = 100 A/ m s
V SD
t rr
Q rr
295
1.85
1.6
V
ns
m C
4. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
5. Guaranteed by design.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NDF08N50ZH
MOSFET N CH 500V 8.5A TO220FP
NDF08N60ZG
MOSFET N-CH 600V 7.5A TO220FP
NDF08N60ZH
MOSFET N-CH 600V 7.5A TO-220FP
NDF10N62ZG
MOSFET N-CH 620V .75OHM TO220FP
NDF11N50ZG
MOSFET N-CH 500V 12A TO-220FP
NDF11N50ZH
MOSFET N CH 500V 12A TO220FP
NDFEB 6X10MM
MAGNET PERM NDFEB 6.0X10.0MM
NDP6020P
MOSFET P-CH 20V 24A TO-220
相关代理商/技术参数
NDF08N50ZH
功能描述:MOSFET NFET 500V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF08N60Z
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 0.95 ?
NDF08N60ZG
功能描述:MOSFET 600V 0.95 OHM TO- 220FP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF08N60ZH
功能描述:MOSFET NFET 600V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF10N60Z
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 0.65 ?, 600 Volts
NDF10N60ZG
功能描述:MOSFET NFET T0220FP 600V 10A .65 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF10N60ZH
功能描述:MOSFET NFET 600V 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF10N62Z
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 0.65 ?